Corsair CMD16GX3M4A2666C11 4GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

总分

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异规格评论

差异

Corsair CMD16GX3M4A2666C11 4GB

需要考虑的原因
Corsair CMD16GX3M4A2666C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 42

左右 40% 更低的延时
更快的读取速度，GB/s

18.6 15.7

测试中的平均数值
更快的写入速度，GB/s

12.9 11.9

测试中的平均数值

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M4A2666C11 4GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 42
读取速度，GB/s

18.6 15.7
写入速度，GB/s

12.9 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3236 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

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