Corsair CMK16GX4M2B3000C15 8GB vs Samsung M378A5244CB0-CTD 4GB

总分

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异规格评论

差异

Corsair CMK16GX4M2B3000C15 8GB

需要考虑的原因
Corsair CMK16GX4M2B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时
更快的读取速度，GB/s

17.9 15.8

测试中的平均数值
更快的写入速度，GB/s

13.8 11.8

测试中的平均数值

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Corsair CMK16GX4M2B3000C15 8GB

Samsung M378A5244CB0-CTD 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

17.9 15.8
写入速度，GB/s

13.8 11.8
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3336 2497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF464128CK8I6GKSEG 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Avexir Technologies Corporation T 4GB

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Crucial Technology BL16G32C16U4BL.M16FE 16GB

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V-GEN D4S8GL32A8TS 8GB

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Crucial Technology BLS4G4D240FSB.8FBD2 4GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

A-DATA Technology DDR3 1600 4GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

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Kingston HP32D4S2S1ME-8 8GB