Corsair CML16GX3M2A1600C10 8GB vs Crucial Technology CT8G4DFS8266.C8FD1 8GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Crucial Technology CT8G4DFS8266.C8FD1 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

16.6 13.9

测试中的平均数值
更快的写入速度，GB/s

11.6 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

13.9 16.6
写入速度，GB/s

8.5 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2385 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-2400C17-8GIS 8GB

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Transcend Information JM2400HSB-8G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMW16GX4M2Z3600C18 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMK16GX4M4A2133C13 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMK64GX4M4B3200C16 16GB