Corsair CML16GX3M2A1600C10 8GB vs Crucial Technology CT8G4SFRA266.M8FRS 8GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Crucial Technology CT8G4SFRA266.M8FRS 8GB

Crucial Technology CT8G4SFRA266.M8FRS 8GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

Crucial Technology CT8G4SFRA266.M8FRS 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更快的读取速度，GB/s

16.1 13.9

测试中的平均数值
更快的写入速度，GB/s

13.1 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology CT8G4SFRA266.M8FRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

13.9 16.1
写入速度，GB/s

8.5 13.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2385 3047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-16GTRG 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Mushkin 99[2/7/4]183 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

G Skill Intl F4-3400C16-8GSXW 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB