Corsair CML16GX3M2A1600C10 8GB vs G Skill Intl F4-3000C15-4GVRB 4GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

G Skill Intl F4-3000C15-4GVRB 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

G Skill Intl F4-3000C15-4GVRB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GVRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

17.2 13.9

测试中的平均数值
更快的写入速度，GB/s

13.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3000C15-4GVRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

13.9 17.2
写入速度，GB/s

8.5 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2385 3157

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XJ69DF-HYA 8GB

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Crucial Technology BL16G26C16S4B.16FD 16GB

Corsair CMK32GX5M2B5200C40 16GB

Corsair CMK32GX5M2B5200C40 16GB