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Corsair CML16GX3M2A1600C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
比较
Corsair CML16GX3M2A1600C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
总分
Corsair CML16GX3M2A1600C10 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB
报告一个错误
更快的读取速度,GB/s
13.9
10.2
测试中的平均数值
更快的写入速度,GB/s
8.5
7.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
41
左右 -17% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CML16GX3M2A1600C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
35
读取速度,GB/s
13.9
10.2
写入速度,GB/s
8.5
7.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2385
2124
Corsair CML16GX3M2A1600C10 8GB RAM的比较
Corsair CMZ16GX3M2A1600C9 8GB
Corsair CM4X8GE2666C16K8 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK32GX4M4B3600C18 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
报告一个错误
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Bug description
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