Corsair CML16GX3M2A1600C10 8GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 5% 更低的延时
更快的读取速度，GB/s

13.9 11.4

测试中的平均数值

Micron Technology 9ASF51272PZ-2G1A2 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1A2 4GB

报告一个错误

更快的写入速度，GB/s

9.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 43
读取速度，GB/s

13.9 11.4
写入速度，GB/s

8.5 9.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2385 2532

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Apacer Technology 78.C1GS7.DFW0C 8GB

Apacer Technology 78.C1GS7.DFW0C 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Kingston 9965640-006.A01G 32GB

Kingston 9965640-006.A01G 32GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Corsair CMK16GX4M2D2400C14 8GB

Corsair CMK16GX4M2D2400C14 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G