Corsair CML16GX3M2A1600C10 8GB vs SK Hynix HMAA4GS6MJR8N-VK 32GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

SK Hynix HMAA4GS6MJR8N-VK 32GB

需要考虑的原因
SK Hynix HMAA4GS6MJR8N-VK 32GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时
更快的读取速度，GB/s

14.7 13.9

测试中的平均数值
更快的写入速度，GB/s

8.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 36
读取速度，GB/s

13.9 14.7
写入速度，GB/s

8.5 8.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2385 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2864QZ3-CF7 1GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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Micron Technology 18ADF2G72AZ-2G3A1 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905625-096.A00G 16GB

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