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Corsair CML32GX3M4A1866C10 8GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB

Corsair CML32GX3M4A1866C10 8GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分
star star star star star
Corsair CML32GX3M4A1866C10 8GB

Corsair CML32GX3M4A1866C10 8GB

总分
star star star star star
A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异 规格 评论

差异

Corsair CML32GX3M4A1866C10 8GB 需要考虑的原因
Corsair CML32GX3M4A1866C10 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 57
    左右 35% 更低的延时
A-DATA Technology AO1E34RCSV1-BF1S 16GB 需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 10.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Corsair CML32GX3M4A1866C10 8GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 57
  • 读取速度，GB/s
    13.2 left arrow 16.8
  • 写入速度，GB/s
    10.2 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2746 left arrow 2792

Corsair CML32GX3M4A1866C10 8GB RAM的比较

A-DATA Technology AD5U48008G-B 8GB
Corsair CMW16GX4M2Z4600C18 8GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CML32GX3M4A1866C10 8GB
Corsair CML32GX3M4A1866C10 8GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905598-025.A00G 8GB
Kingston 9905598-025.A00G 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM