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Corsair CML8GX3M1A1600C9 8GB
Samsung M471A5244CB0-CWE 4GB
比较
Corsair CML8GX3M1A1600C9 8GB vs Samsung M471A5244CB0-CWE 4GB
总分
Corsair CML8GX3M1A1600C9 8GB
总分
Samsung M471A5244CB0-CWE 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M1A1600C9 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
38
左右 5% 更低的延时
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更快的读取速度,GB/s
15.5
13.6
测试中的平均数值
更快的写入速度,GB/s
12.0
9.2
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M1A1600C9 8GB
Samsung M471A5244CB0-CWE 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
38
读取速度,GB/s
13.6
15.5
写入速度,GB/s
9.2
12.0
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2615
2283
Corsair CML8GX3M1A1600C9 8GB RAM的比较
A-DATA Technology AD5U48008G-B 8GB
G Skill Intl F4-2400C16-16GRS 16GB
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CML8GX3M1A1600C9 8GB
Samsung M471A5244CB0-CWE 4GB
AMD R5S38G1601U2S 8GB
Corsair MK16GX4M2B3200C16 8GB
Team Group Inc. UD5-6400 16GB
Kingston 99U5713-001.A00G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CM4X16GD3200C16K4E 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Kingston KVR533D2N4 512MB
Mushkin 99[2/7/4]208F 8GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905630-018.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GU880-36A180U 8GB
Kllisre KRE-D3U1600M/8G 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
SK Hynix DDR2 800 2G 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung 1600 CL10 Series 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
报告一个错误
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Bug description
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