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Corsair CML8GX3M2A1600C9 4GB
Gloway International (HK) STK2400C15-16GB 16GB

Corsair CML8GX3M2A1600C9 4GB vs Gloway International (HK) STK2400C15-16GB 16GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Gloway International (HK) STK2400C15-16GB 16GB 需要考虑的原因
Gloway International (HK) STK2400C15-16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 39
    左右 -70% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Gloway International (HK) STK2400C15-16GB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 23
  • 读取速度，GB/s
    14.6 left arrow 17.0
  • 写入速度，GB/s
    8.8 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 3098

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Gloway International (HK) STK2400C15-16GB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMK16GX4M2B2800C14 8GB
Corsair CMK16GX4M2B2800C14 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Essencore Limited KD4AGS88C-26N1900 16GB
Essencore Limited KD4AGS88C-26N1900 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM