Corsair CML8GX3M2A1600C9 4GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

需要考虑的原因
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

15.4 14.6

测试中的平均数值
更快的写入速度，GB/s

12.4 8.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 37
读取速度，GB/s

14.6 15.4
写入速度，GB/s

8.8 12.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2355 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D26BFSE.8FD2 4GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

Transcend Information TS512MSH64V1H 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB