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Corsair CML8GX3M2A1600C9 4GB
Kingston MSI26D4S9S8HJ-8 8GB

Corsair CML8GX3M2A1600C9 4GB vs Kingston MSI26D4S9S8HJ-8 8GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Kingston MSI26D4S9S8HJ-8 8GB 需要考虑的原因
Kingston MSI26D4S9S8HJ-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 39
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Kingston MSI26D4S9S8HJ-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 35
  • 读取速度，GB/s
    14.6 left arrow 16.8
  • 写入速度，GB/s
    8.8 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 2962

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston MSI26D4S9S8HJ-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston MSI26D4S9S8HJ-8 8GB
Kingston MSI26D4S9S8HJ-8 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905702-027.A00G 8GB
Kingston 9905702-027.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM