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Corsair CML8GX3M2A1600C9 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
比较
Corsair CML8GX3M2A1600C9 4GB vs Micron Technology 18ASF2G72AZ-2G1A1 16GB
总分
Corsair CML8GX3M2A1600C9 4GB
总分
Micron Technology 18ASF2G72AZ-2G1A1 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
更快的读取速度,GB/s
14.6
11.7
测试中的平均数值
更快的写入速度,GB/s
8.8
7.7
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72AZ-2G1A1 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
39
左右 -26% 更低的延时
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
31
读取速度,GB/s
14.6
11.7
写入速度,GB/s
8.8
7.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2355
1997
Corsair CML8GX3M2A1600C9 4GB RAM的比较
G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB RAM的比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston ACR512X64D3S13C9G 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB
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Samsung M393A2G40EB1-CRC 16GB
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TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Kingston KF3200C16D4/32GX 32GB
Kingston 9905403-02X.B00LF 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905702-020.A00G 8GB
Kingston HP698651-154-MCN 8GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905622-025.A00G 4GB
报告一个错误
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Bug description
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