Corsair CML8GX3M2A1600C9 4GB vs Panram International Corporation D4N2400PS-8G 8GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

更快的读取速度，GB/s

14.6 12.5

测试中的平均数值
更快的写入速度，GB/s

8.8 6.1

测试中的平均数值

Panram International Corporation D4N2400PS-8G 8GB

需要考虑的原因
Panram International Corporation D4N2400PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 -56% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

Panram International Corporation D4N2400PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 25
读取速度，GB/s

14.6 12.5
写入速度，GB/s

8.8 6.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2355 1858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5170FH0-CK0 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Micron Technology 18ASF2G72AZ-2G6D1 16GB

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Corsair CMD16GX4M4A2800C16 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Apacer Technology 78.BAGMD.AF20B 4GB

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Samsung M378B5273DH0-CH9 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston K821PJ-MIB 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

Kingston 9905403-061.A00LF 2GB

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Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB