Corsair CML8GX3M2A1600C9 4GB vs V-GEN D4R8GL24A8R 8GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 77

左右 49% 更低的延时
更快的写入速度，GB/s

8.8 8.2

测试中的平均数值

V-GEN D4R8GL24A8R 8GB

需要考虑的原因
V-GEN D4R8GL24A8R 8GB

报告一个错误

更快的读取速度，GB/s

15.5 14.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

V-GEN D4R8GL24A8R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 77
读取速度，GB/s

14.6 15.5
写入速度，GB/s

8.8 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2355 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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Samsung M378B5773CH0-CH9 2GB

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G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 9965589-007.D01G 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 99U5474-010.A00LF 2GB

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Corsair CMW32GX4M2D3000C16 16GB

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