Corsair CML8GX3M2A1866C9 4GB vs Corsair CM4X8GF2400C16N2 8GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Corsair CM4X8GF2400C16N2 8GB

Corsair CM4X8GF2400C16N2 8GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

Corsair CM4X8GF2400C16N2 8GB

需要考虑的原因
Corsair CM4X8GF2400C16N2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

16.1 14.1

测试中的平均数值
更快的写入速度，GB/s

9.4 8.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Corsair CM4X8GF2400C16N2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

14.1 16.1
写入速度，GB/s

8.7 9.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2228 2607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16GB 2133MHz DIMM 16GB

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Samsung M393B5270CH0-CH9 4GB

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Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-3400C16-16GVR 16GB

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Corsair CMN16GX4M2Z3200C16 8GB