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Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
比较
Corsair CML8GX3M2A1866C9 4GB vs Crucial Technology BLS4G4D26BFSC.8FB 4GB
总分
Corsair CML8GX3M2A1866C9 4GB
总分
Crucial Technology BLS4G4D26BFSC.8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FB 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
38
左右 -46% 更低的延时
更快的读取速度,GB/s
17.8
14.1
测试中的平均数值
更快的写入速度,GB/s
14.0
8.7
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
26
读取速度,GB/s
14.1
17.8
写入速度,GB/s
8.7
14.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2228
3143
Corsair CML8GX3M2A1866C9 4GB RAM的比较
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KVR16N11/8-SP 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
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Corsair CMD16GX4M4A2666C16 4GB
Samsung M391B5673EH1-CH9 2GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
Samsung M393B2G70BH0-CH9 16GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
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A-DATA Technology AO1P32NCSV1-BEWS 16GB
Hexon Technology Pte Ltd HEXON 1GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M471A2K43BB1-CPB 16GB
报告一个错误
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Bug description
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