Corsair CML8GX3M2A1866C9 4GB vs Crucial Technology BLS8G4D240FSB.M16FAD 8GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSB.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 -46% 更低的延时
更快的写入速度，GB/s

11.1 8.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 26
读取速度，GB/s

14.1 14.1
写入速度，GB/s

8.7 11.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2228 2646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV16GX4M1A2400C16 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Samsung M378B5673EH1-CF8 2GB

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Kingston 9965662-004.A00G 16GB

Kingston 9905403-038.A00LF 4GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F4-3400C16-8GTZ 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CM4X8GE3000C15K4 8GB

Corsair CM4X8GE3000C15K4 8GB