Corsair CML8GX3M2A1866C9 4GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 44

左右 14% 更低的延时

SK Hynix HMA851S6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB

报告一个错误

更快的读取速度，GB/s

14.9 14.1

测试中的平均数值
更快的写入速度，GB/s

11.6 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 44
读取速度，GB/s

14.1 14.9
写入速度，GB/s

8.7 11.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2228 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information TS512MSH64V4H 4GB

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Corsair CML8GX3M2A1866C9 4GB

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Kingston KHX318C10FR/8G 8GB

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Samsung M471A4G43MB1-CTD 32GB

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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Team Group Inc. Team-Elite-2400 4GB

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Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB