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Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 38
    左右 -90% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 20
  • 读取速度，GB/s
    12.8 left arrow 19.3
  • 写入速度，GB/s
    9.1 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 3327

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
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Crucial Technology BLE8G4D26AFEA.16FAD 8GB
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Kingston 9905403-156.A00LF 2GB
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内存RAM
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内存RAM
Kingston 99U5403-036.A00G 4GB
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内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
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内存RAM
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内存RAM
Kingston 99U5595-005.A00LF 2GB
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内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
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SK Hynix HMT151R7TFR4C-H9 4GB
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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Essencore Limited KD44GU481-26N1600 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM