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Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB

Corsair CMSX4GX3M1A1600C9 4GB vs Crucial Technology CT16G4DFD824A.C16FDD 16GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Crucial Technology CT16G4DFD824A.C16FDD 16GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
Crucial Technology CT16G4DFD824A.C16FDD 16GB 需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FDD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 38
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 31
  • 读取速度，GB/s
    12.8 left arrow 15.7
  • 写入速度，GB/s
    9.1 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 2817

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
Crucial Technology CT51264BF160BJ.M8F 4GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
SK Hynix HMT41GU6MFR8C-PB 8GB
SK Hynix HMT41GU6MFR8C-PB 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C19-8GVRB 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M393A4K40BB2-CTD 32GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
内存RAM