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Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB

Corsair CMSX4GX3M1A1600C9 4GB vs Crucial Technology CT16G4SFRA266.M16FRS 16GB

总分
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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.1 left arrow 8.8
    测试中的平均数值
Crucial Technology CT16G4SFRA266.M16FRS 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA266.M16FRS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 12.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 38
  • 读取速度，GB/s
    12.8 left arrow 14.1
  • 写入速度，GB/s
    9.1 left arrow 8.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 2483

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM