Corsair CMSX4GX3M1A1600C9 4GB vs Crucial Technology CT8G4DFRA32A.C8FP 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Crucial Technology CT8G4DFRA32A.C8FP 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA32A.C8FP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

18.8 12.8

测试中的平均数值
更快的写入速度，GB/s

14.7 9.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

12.8 18.8
写入速度，GB/s

9.1 14.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2099 3394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M395T2863QZ4-CF76 1GB

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Kingston 9905711-017.A00G 4GB

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Kingston KHX2400C11D3/4GX 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-2133C15-8GRB 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB