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Corsair CMSX4GX3M1A1600C9 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 73
    左右 48% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 8.5
    测试中的平均数值
Eudar Technology Inc. 8GXMP3000CL16 8GB 需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 12.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 73
  • 读取速度，GB/s
    12.8 left arrow 14.7
  • 写入速度，GB/s
    9.1 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 1712

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Eudar Technology Inc. 8GXMP3000CL16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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Corsair CMD16GX4M2B3600C18 8GB
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