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Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-2400C15-8GRB 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs G Skill Intl F4-2400C15-8GRB 8GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
G Skill Intl F4-2400C15-8GRB 8GB

G Skill Intl F4-2400C15-8GRB 8GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
G Skill Intl F4-2400C15-8GRB 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 38
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-2400C15-8GRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 36
  • 读取速度，GB/s
    12.8 left arrow 14.5
  • 写入速度，GB/s
    9.1 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 3001

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-2400C15-8GRB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMH16GX4M2D3600C18 8GB
内存RAM
G Skill Intl F5-6000U3636E16G 16GB
G Skill Intl F5-6000U3636E16G 16GB
G Skill Intl F5-6000U3636E16G 16GB
G Skill Intl F5-6000U3636E16G 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905665-017.A00G 4GB
Kingston 9905665-017.A00G 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM