Corsair CMSX4GX3M1A1600C9 4GB vs Kingston 9905598-025.A00G 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

更快的写入速度，GB/s

9.1 6.8

测试中的平均数值

Kingston 9905598-025.A00G 8GB

需要考虑的原因
Kingston 9905598-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时
更快的读取速度，GB/s

13.4 12.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Kingston 9905598-025.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 25
读取速度，GB/s

12.8 13.4
写入速度，GB/s

9.1 6.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2099 2045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-16GTZKY 16GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-4000C19-8GTZ 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Kingston 9905598-025.A00G 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung M378A1K43DB2-CTD 8GB

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G Skill Intl F4-3200C15-16GVR 16GB

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Kingston 9905630-007.A00G 8GB

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Corsair CM2X1024-8500C5D 1GB

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Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Kingston 99P5474-014.A00LF 4GB

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Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB