Corsair CMSX4GX3M1A1600C9 4GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 52

左右 27% 更低的延时
更快的读取速度，GB/s

12.8 10.2

测试中的平均数值
更快的写入速度，GB/s

9.1 8.2

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

更高的内存带宽，mbps

17500 12800

左右 1.37 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 52
读取速度，GB/s

12.8 10.2
写入速度，GB/s

9.1 8.2
内存带宽，mbps

12800 17500

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

2099 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-4GTZ 4GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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AMD R5316G1609U2K 8GB

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Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Panram International Corporation PUD42133C154G2VS 4GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905668-001.A00G 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB