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Corsair CMSX4GX3M1A1600C9 4GB
Samsung M471A1G43DB0-0-B 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs Samsung M471A1G43DB0-0-B 8GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.1 left arrow 6.9
    测试中的平均数值
Samsung M471A1G43DB0-0-B 8GB 需要考虑的原因
Samsung M471A1G43DB0-0-B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 38
    左右 -19% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 12.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Samsung M471A1G43DB0-0-B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 32
  • 读取速度，GB/s
    12.8 left arrow 13.8
  • 写入速度，GB/s
    9.1 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 1844

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Samsung M471A1G43DB0-0-B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Corsair CMK16GX4M2B3600C18 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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Crucial Technology BLS4G4D240FSB.8FBD2 4GB
内存RAM
Kingston KNWMX1-ETB 4GB
Kingston KNWMX1-ETB 4GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston KHX318C10FR/8G 8GB
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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM