Corsair CMV4GX3M1B1600C11 4GB vs Corsair CMK4GX4M1D2400C14 4GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 72

左右 65% 更低的延时
更快的写入速度，GB/s

8.1 7.8

测试中的平均数值

Corsair CMK4GX4M1D2400C14 4GB

需要考虑的原因
Corsair CMK4GX4M1D2400C14 4GB

报告一个错误

更快的读取速度，GB/s

15.4 14.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMK4GX4M1D2400C14 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 72
读取速度，GB/s

14.2 15.4
写入速度，GB/s

8.1 7.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2307 1682

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD16GX4M4A2666C16 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2666C15-4GRR 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Corsair CMK4GX4M1D2400C14 4GB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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Samsung M378B5773DH0-CH9 2GB

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V-Color Technology Inc. TN416G24D817-VHA/R 16GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

Corsair CMK16GX4M2K4266C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Gloway International Co. Ltd. TYP4U3000E16082C 8GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB