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Corsair CMV4GX3M1B1600C11 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
比较
Corsair CMV4GX3M1B1600C11 4GB vs Lexar Co Limited LD4AS008G-H2666GST 8GB
总分
Corsair CMV4GX3M1B1600C11 4GB
总分
Lexar Co Limited LD4AS008G-H2666GST 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 14% 更低的延时
需要考虑的原因
Lexar Co Limited LD4AS008G-H2666GST 8GB
报告一个错误
更快的读取速度,GB/s
15.8
14.2
测试中的平均数值
更快的写入速度,GB/s
10.2
8.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
29
读取速度,GB/s
14.2
15.8
写入速度,GB/s
8.1
10.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 9 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2307
2708
Corsair CMV4GX3M1B1600C11 4GB RAM的比较
Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMV4GX3M1B1600C11 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M471A1K43BB1-CRC 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9905678-041.A00G 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMK16GX4M2C3333C16 8GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A5143TB2-CTD 4GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Micron Technology 16GB 2133MHz DIMM 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F3-12800CL7-4GBTDD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-4400C17-8GVK 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Patriot Memory (PDP Systems) PSD48G21332 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9965667-001.A00G 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M471A2K43BB1-CTD 16GB
报告一个错误
×
Bug description
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