Corsair CMV4GX3M1B1600C11 4GB vs Micron Technology AFLD44EK2P 4GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 71

左右 65% 更低的延时
更快的写入速度，GB/s

8.1 6.8

测试中的平均数值

Micron Technology AFLD44EK2P 4GB

需要考虑的原因
Micron Technology AFLD44EK2P 4GB

报告一个错误

更快的读取速度，GB/s

15.3 14.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Micron Technology AFLD44EK2P 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 71
读取速度，GB/s

14.2 15.3
写入速度，GB/s

8.1 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2307 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMD32GX4M4B2800C14 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-4133C19-8GTZKKF 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB