Corsair CMV4GX3M1B1600C11 4GB vs Samsung M471A1K1KBB0-CPB 8GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 4% 更低的延时
更快的读取速度，GB/s

14.2 11.7

测试中的平均数值
更快的写入速度，GB/s

8.1 5.5

测试中的平均数值

Samsung M471A1K1KBB0-CPB 8GB

需要考虑的原因
Samsung M471A1K1KBB0-CPB 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Samsung M471A1K1KBB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 26
读取速度，GB/s

14.2 11.7
写入速度，GB/s

8.1 5.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-17000, , CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2307 1771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

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Kingston KHX3200C18D4/4G 4GB

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Asgard VMA45UG-MEC1U2BQ2 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston KF3200C20S4/32GX 32MB

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Crucial Technology CT16G4SFD8213.M16FB 16GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3200C14-16GTZKY 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F4-2933C14-16GTZRX 16GB

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Kingston 9905471-001.A00LF 2GB

Kingston 9905471-001.A00LF 2GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB