Corsair CMV4GX3M1B1600C11 4GB vs Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

报告一个错误

更快的读取速度，GB/s

16.8 14.2

测试中的平均数值
更快的写入速度，GB/s

11.7 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

14.2 16.8
写入速度，GB/s

8.1 11.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2307 3154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 9905403-061.A00LF 2GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 16ATF2G64AZ-2G3A1 16GB

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Crucial Technology CT8G4DFS832A.C8FJ 8GB

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Kingston 99U5403-036.A00G 4GB

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Team Group Inc. Team-Elite-2400 4GB

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Samsung M471B5673FH0-CF8 2GB

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Kingston KF3733C19D4/16GX 16GB

Kingston KF3733C19D4/16GX 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB