Corsair CMX32GX3M4A1600C11 8GB vs Micron Technology 8ATF1G64AZ-2G3H1 8GB

总分

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

总分

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

差异规格评论

差异

Corsair CMX32GX3M4A1600C11 8GB

需要考虑的原因
Corsair CMX32GX3M4A1600C11 8GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G3H1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 42

左右 -17% 更低的延时
更快的读取速度，GB/s

14.9 13.2

测试中的平均数值
更快的写入速度，GB/s

10.5 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMX32GX3M4A1600C11 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 36
读取速度，GB/s

13.2 14.9
写入速度，GB/s

8.3 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2348 2589

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G36C16U4B.M8FE1 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Samsung M471B5273DH0-CH9 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Samsung M3 78T2953EZ3-CF7 1GB

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Samsung M393A4K40CB2-CTD 32GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3000C16-8GTZR 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB