Corsair CMX32GX3M4A1600C11 8GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

总分

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

总分

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

差异规格评论

差异

Corsair CMX32GX3M4A1600C11 8GB

需要考虑的原因
Corsair CMX32GX3M4A1600C11 8GB

报告一个错误

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

20.9 13.2

测试中的平均数值
更快的写入速度，GB/s

18.5 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX32GX3M4A1600C11 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

13.2 20.9
写入速度，GB/s

8.3 18.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2348 4324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C16-8GVS 8GB

G Skill Intl F4-3200C16-8GVS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BL16G32C16U4BL.M16FE 16GB

Crucial Technology BL16G32C16U4BL.M16FE 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB