RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMX4GX3M1A1333C9 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Corsair CMX4GX3M1A1333C9 4GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

总分
star star star star star
Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分
star star star star star
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

差异 规格 评论

差异

Corsair CMX4GX3M1A1333C9 4GB 需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB
报告一个错误
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB 需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 40
    左右 -74% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMX4GX3M1A1333C9 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 23
  • 读取速度，GB/s
    12.8 left arrow 14.4
  • 写入速度，GB/s
    7.0 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2021 left arrow 2236

Corsair CMX4GX3M1A1333C9 4GB RAM的比较

AMD R534G1601U1S-UO 4GB
Kingston HX318C10FK/4 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-4000C18-8GTZKK 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F4-2400C15-8GFT 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3466C16-8GVK 8GB
G Skill Intl F4-3466C16-8GVK 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905598-006.A00G 8GB
Kingston 9905598-006.A00G 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 99U5702-094.A00G 8GB
Kingston 99U5702-094.A00G 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Panram International Corporation PUD42133C138G4NJK 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4400C19-32GTZR 32GB
G Skill Intl F4-4400C19-32GTZR 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3333C16-8GVR 8GB
G Skill Intl F4-3333C16-8GVR 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMT32GX4M4C3466C16 8GB
内存RAM