Corsair CMX4GX3M1A1333C9 4GB vs Kllisre 99P54280002.A00LF 8GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 47

左右 15% 更低的延时
更快的读取速度，GB/s

12.8 11.2

测试中的平均数值

Kllisre 99P54280002.A00LF 8GB

需要考虑的原因
Kllisre 99P54280002.A00LF 8GB

报告一个错误

更快的写入速度，GB/s

8.4 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

Kllisre 99P54280002.A00LF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 47
读取速度，GB/s

12.8 11.2
写入速度，GB/s

7.0 8.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2021 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK128GX4M8B3333C16 16GB

Corsair CMK128GX4M8B3333C16 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Kingston 9905665-017.A00G 4GB

Kingston 9905665-017.A00G 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB