Corsair CMX4GX3M1A1333C9 4GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 59

左右 32% 更低的延时

OCMEMORY OCM2933CL16-16GBH 16GB

需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB

报告一个错误

更快的读取速度，GB/s

20.1 12.8

测试中的平均数值
更快的写入速度，GB/s

10.6 7.0

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

OCMEMORY OCM2933CL16-16GBH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 59
读取速度，GB/s

12.8 20.1
写入速度，GB/s

7.0 10.6
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-23400, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2021 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMSX8GX4M1A2666C18 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

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Crucial Technology BLS8G3N169ES4.16FE 8GB

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G Skill Intl F4-3000C16-8GVRB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB