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Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
比较
Corsair CMX4GX3M2A1600C9 2GB vs Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
总分
Corsair CMX4GX3M2A1600C9 2GB
总分
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
38
左右 -36% 更低的延时
更快的读取速度,GB/s
16.2
13.9
测试中的平均数值
更快的写入速度,GB/s
12.4
8.7
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
28
读取速度,GB/s
13.9
16.2
写入速度,GB/s
8.7
12.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2106
3305
Corsair CMX4GX3M2A1600C9 2GB RAM的比较
Corsair CM3B4G2C1600L9 4GB
Corsair CMX4GX3M2B1600C9 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KF552C40-16 16GB
Corsair CMD32GX4M2A2800C16 16GB
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G Skill Intl F4-3400C16-4GRBD 4GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston 9905711-015.A00G 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Kingston 99U5474-028.A00LF 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
Kingston 99U5584-001.A00LF 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
A-DATA Technology DQVE1908 512MB
Samsung M471A4G43AB1-CWE 32GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
报告一个错误
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Bug description
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