Corsair CMX4GX3M2A1600C9 2GB vs Crucial Technology CT4G4DFS8213.C8FBD1 4GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FBD1 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更快的读取速度，GB/s

15.5 13.9

测试中的平均数值
更快的写入速度，GB/s

11.1 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

13.9 15.5
写入速度，GB/s

8.7 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2106 2484

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston HP24D4U7S8MH-8 8GB

Kingston HP24D4U7S8MH-8 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

Elpida EBJ40UG8EFU5-GNL-F 4GB

Elpida EBJ40UG8EFU5-GNL-F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB