Corsair CMX4GX3M2A1600C9 2GB vs Crucial Technology CT4G4DFS8266.C8FF 4GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 81

左右 53% 更低的延时
更快的写入速度，GB/s

8.7 7.9

测试中的平均数值

Crucial Technology CT4G4DFS8266.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FF 4GB

报告一个错误

更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 81
读取速度，GB/s

13.9 15.2
写入速度，GB/s

8.7 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2106 1668

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology CT16G4DFS8266.C8FE 16GB

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PNY Electronics PNY 2GB

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Kingston 9905663-012.A00G 16GB

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Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Essencore Limited KD48GS88J-26N1900 8GB

Essencore Limited KD48GS88J-26N1900 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 9905703-011.A00G 16GB

Kingston 9905703-011.A00G 16GB