Corsair CMX4GX3M2A1600C9 2GB vs G Skill Intl F4-4800C19-8GTZRC 8GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

G Skill Intl F4-4800C19-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-4800C19-8GTZRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

18 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-4800C19-8GTZRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

13.9 18.0
写入速度，GB/s

8.7 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2106 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673EH1-CF8 2GB

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AMD R744G2400U1S-UO 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Apacer Technology 78.01G86.9H50C 1GB

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A-DATA Technology AD73I1C1674EV 4GB

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Kingston KCRXJ6-MIE 16GB

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Samsung M393B2G70BH0-YK0 16GB

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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Avexir Technologies Corporation DDR3-1600 CL10 8GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Kingston 99P5471-016.A00LF 8GB

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Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB