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Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
比较
Corsair CMX4GX3M2A1600C9 2GB vs Patriot Memory (PDP Systems) PSD44G266641 4GB
总分
Corsair CMX4GX3M2A1600C9 2GB
总分
Patriot Memory (PDP Systems) PSD44G266641 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
38
75
左右 49% 更低的延时
更快的写入速度,GB/s
8.7
6.9
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) PSD44G266641 4GB
报告一个错误
更快的读取速度,GB/s
15
13.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
75
读取速度,GB/s
13.9
15.0
写入速度,GB/s
8.7
6.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2106
1729
Corsair CMX4GX3M2A1600C9 2GB RAM的比较
Corsair CM3B4G2C1600L9 4GB
Corsair CMX4GX3M2B1600C9 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology DDR4 2400 2OZ 8GB
Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology CT8G4DFD8213.16FA11 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CM4B8G2J2133A15S 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Mushkin 99[2/7/4]200[F/T] 8GB
AMD R5S38G1601U2S 8GB
Corsair CMWB8G1L2666A16W4 8GB
takeMS International AG TMS2GB264D082-805G 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Samsung 9905599-020.A00G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A5244CB0-CRC 4GB
报告一个错误
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Bug description
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