Corsair CMX8GX3M2A1600C11 4GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB

总分

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

差异规格评论

差异

Corsair CMX8GX3M2A1600C11 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB

报告一个错误

更快的写入速度，GB/s

9.8 8.2

测试中的平均数值

A-DATA Technology AO1P24HC4R1-BSIS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的读取速度，GB/s

14.9 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A1600C11 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 36
读取速度，GB/s

12.1 14.9
写入速度，GB/s

9.8 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2453 2281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

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Corsair CMSX16GX4M1A2666C18 16GB

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