Corsair CMX8GX3M2A2000C9 4GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

总分

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

差异规格评论

差异

Corsair CMX8GX3M2A2000C9 4GB

需要考虑的原因
Corsair CMX8GX3M2A2000C9 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 35

左右 -67% 更低的延时
更快的读取速度，GB/s

18.6 14.3

测试中的平均数值
更快的写入速度，GB/s

14.0 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A2000C9 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 21
读取速度，GB/s

14.3 18.6
写入速度，GB/s

9.4 14.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2479 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3733C17-16GTZSW 16GB

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Corsair CMX8GX3M2A2000C9 4GB

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Avant Technology W642GU44J2320NC 16GB

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PNY Electronics PNY 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Kingston 9905702-002.A00G 8GB

Kingston 9905702-002.A00G 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KHX3300C16D4/4GX 4GB

Kingston KHX3300C16D4/4GX 4GB