Corsair CMY16GX3M4A2133C8 4GB vs Corsair CMD16GX4M2E4000C19 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 26

左右 23% 更低的延时

Corsair CMD16GX4M2E4000C19 8GB

需要考虑的原因
Corsair CMD16GX4M2E4000C19 8GB

报告一个错误

更快的读取速度，GB/s

18.5 17

测试中的平均数值
更快的写入速度，GB/s

14.9 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMD16GX4M2E4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 26
读取速度，GB/s

17.0 18.5
写入速度，GB/s

11.5 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3077 3475

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMD16GX4M2E4000C19 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

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Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-3300C16-4GRRD 4GB