Corsair CMY16GX3M4A2133C8 4GB vs Corsair CMR32GX4M4C3200C16 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 26

左右 23% 更低的延时

Corsair CMR32GX4M4C3200C16 8GB

需要考虑的原因
Corsair CMR32GX4M4C3200C16 8GB

报告一个错误

更快的读取速度，GB/s

19.2 17

测试中的平均数值
更快的写入速度，GB/s

15.6 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMR32GX4M4C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 26
读取速度，GB/s

17.0 19.2
写入速度，GB/s

11.5 15.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3077 3865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2800C16-8GRR 8GB

G Skill Intl F4-2800C16-8GRR 8GB

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Corsair CMD32GX4M4B3333C16 8GB

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Samsung M378A1G43TB1-CTD 8GB