Corsair CMY16GX3M4A2133C8 4GB vs Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 23

左右 13% 更低的延时
更快的读取速度，GB/s

17 14.7

测试中的平均数值
更快的写入速度，GB/s

11.5 7.3

测试中的平均数值

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

需要考虑的原因
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 23
读取速度，GB/s

17.0 14.7
写入速度，GB/s

11.5 7.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3077 2244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Samsung M378A1G43EB1-CRC 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Corsair CMU32GX4M4C3466C16 8GB

Corsair CMU32GX4M4C3466C16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HMA82GR8AMR4N-TF 16GB

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Samsung M471B5273EB0-CK0 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N