Corsair CMY16GX3M4A2133C8 4GB vs Kingston 99P5723-006.A00G 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 34

左右 41% 更低的延时
更快的读取速度，GB/s

17 13.1

测试中的平均数值
更快的写入速度，GB/s

11.5 6.4

测试中的平均数值

Kingston 99P5723-006.A00G 8GB

需要考虑的原因
Kingston 99P5723-006.A00G 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Kingston 99P5723-006.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 34
读取速度，GB/s

17.0 13.1
写入速度，GB/s

11.5 6.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS824A.C8FDD1 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Kingston 99P5723-006.A00G 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Kingston 9905744-077.A00G 16GB

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Samsung M471B5273DH0-CK0 4GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB